IRG4PC50WPBF Datasheet PDF – 600V, 55A, IGBT, Transistor

Part Number: IRG4PC50WPBF

Function: 600V, 55A, N-Ch, INSULATED GATE BIPOLAR TRANSISTOR

Manufacturer: International Rectifier

Pinouts:

IRG4PC50WPBF datasheet

 

Description

This is 600V, 55A, IGBT. The IGBT is insulated-gate bipolar transistor.

Features

1. Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications

2. Industry-benchmark switching losses improve efficiency of all power supply topologies

3. 50% reduction of Eoff parameter

4. Low IGBT conduction losses

5. Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability

 

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 600 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 55 A (Tc = 25°C)

4. Collector Dissipation : Pc = 200 W (Tc = 25°C)

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

 

Benefits :

1. Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz (“hard switched” mode)

2. Of particular benefit to single-ended converters and boost PFC topologies 150W and higher

3. Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >300 kHz)

Other data sheets are available within the file: IRG4PC50, IRG4PC50W, IRG4PC50-WPBF

 

IRG4PC50WPBF Datasheet PDF Download


IRG4PC50WPBF pdf