Part Number: BUV50
Function: 250V, 25A, HIGH POWER NPN SILICON TRANSISTOR
Package: TO-3 Type
Manufacturer: STMicroelectronics
Image and Pinouts:
Description
The BUV50 is a Multiepitaxial planar NPN transistor in TO-3 metal case.
It’s intented for use in high frequency and efficiency converters such us motor controllers and industrial equipment.
Features
1. High Current Capability
2. Low Collector Saturation Voltage : VCE(sat)= 0.8V (Max.) @IC= 10A
3. High Switching Speed
4. Minimum Lot-to-Lot variations for robust device performance and reliable operatio
Absolute maximum ratings ( Ta=25°C )
0. Collector to Base Voltage: Vcbo = 250 V
1. Collector to Emitter Voltage: Vceo = 125 V
2. Emitter to Base Voltage: Vebo = 7 V
3. Collector Current: Ic = 25 A
4. Total Power Dissipation : Ptot = 150 W
5. Junction Temperature: Tj = 150°C
6. Storage Temperature: Tsg = -65 ~ +200°C
BUV50 Datasheet PDF Download
Other data sheets are available within the file: BUV-50
