JAN2N2222A Datasheet – 50V, 800mA, NPN Transistor

Part Number: JAN2N2222A

Function: Small Signal Switching NPN Transistor

Package: TO-18 Type

Manufacturer: ON Semiconductor

Image:

JAN2N2222A datasheet

Description

This is 50V, 800mA, NPN Silicon Switching Transistor.

 

Absolute maximum ratings ( Ta=25°C )

1. Collector-Emitter Voltage : VCEO = 50 Vdc

2. Collector-Base Voltage : VCBO =75 Vdc

3. Emitter-Base Voltage : VEBO = 6.0 Vdc

4. Collector Current : IC = 800 mAdc

Features

• MIL−PRF−19500/255 Qualified

• Available as JAN, JANTX, and JANTXV

Other data sheets are available within the file:

2N2222A, JANTX2N2222A, JANTXV2N2222A

 

JAN2N2222A Datasheet PDF Download


JAN2N2222A pdf

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P4NK60ZFP Datasheet PDF – N-ch, 600V, 4A, MOSFET – ST

Part Number: P4NK60ZFP, STP4NK60ZFP

Function: N-channel 600V, 4A, Power MOSFET

Package: TO-220FP

Manufacturer: STMicroelectronics

Image

p4nk60zfp-600v-mosfet

Description

The P4NK60ZFP is N-channel 600V, 4A, Power MOSFET.

These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics’ SuperMESH technology, achieved through optimization of ST’s well established strip-based  owerMESH layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.

Pinout

p4nk60zfp-datasheet-pinout
Features

1. 100% avalanche tested
2. Very low intrinsic capacitances
3. Zener-protected

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 4 A

4. Total Dissipation : Ptot = 70 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Applications:

1. Switching applications

Marking Information

p4nk60zfp-marking-information

 

P4NK60ZFP Datasheet


 

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