Part Number: IRFB4115

Function: 150V, 104A, MOSFET

Package: TO-220 Type

Manufacturer: International Rectifier

Image and Pinouts:

 

Description

This is 150V, 104A, HEXFET Power MOSFET.

Benefits

1. Improved Gate, Avalanche and Dynamic dv/dt Ruggedness

2. Fully Characterized Capacitance and Avalanche SOA

3. Enhanced body diode dV/dt and dI/dt Capability

4. Lead Free

5. RoHS Compliant, Halogen-Free

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 150 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 104 A (Tc = 25°C)

4. Maximum Power Dissipation: Pd = 380 W

5. Channel temperature: Tch = 175 °C

6. Storage temperature: Tstg = -55 to +175 °C

 

Applications:

1. High Efficiency Synchronous Rectification in SMPS

2. Uninterruptible Power Supply

3. High Speed Power Switching

4. Hard Switched and High Frequency Circuits

Other data sheets are available within the file: IRFB-4115, IRFB4115PbF

 

IRFB4115 Datasheet PDF Download

Part Number: AOC2411

Function: -30 V, -3.4 A, P-Channel MOSFET

Package: WLSCP 1.6×1.6 Type

Manufacturer: Alpha and Omega Semiconductor

Image:

 

Description

The AOC2411 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V V GS(MAX) rating.

 

Pinouts:

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = – 30 V

2. Gate to source voltage: VGSS = ± 12 V

3. Drain current: ID = -3.4 A

4. Power Dissipation: Pd = 0.8 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Other data sheets are available within the file: A0C2411

 

AOC2411 Datasheet PDF Download

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