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Features

1. High current (max. 1.5 A)
2. Low voltage (max. 80 V).

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 45 V

2. Collector to Emitter Voltage: Vceo = 45 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 1.5 A

5. Total Power Dissipation : Ptot = 8 W ( Tc=25°C )

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -65 ~ +150°C

Applications:

1. Driver stages in hi-fi amplifiers and television circuits.

Other data sheets are available within the file: BD137, BD139

This is one of the types of MOSFETs and is a kind of transistor.

Part Number: K3918

Function: 48A, 25V, Switching N-Channel Power MOSFET

Package: TO-251, TO-252 Type

Manufacturer: NEC, Renesas Electronics

Image

Description

The 2SK3918, K3918 is N-channel MOS FET device thatfeatures a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.

Package

K3918 image, nec

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to Source Voltage (VGS = 0 V) : VDSS = 25 V
2. Gate to Source Voltage (VDS = 0 V) : VGSS = ±20 V
3. Drain Current (DC) (TC = 25°C) : ID(DC) = ±48 A
4. Drain Current (pulse) : ID(pulse) = ±192 A
5. Total Power Dissipation (TC = 25°C) : PT1 = 29 W
6. Total Power Dissipation : PT2 = 1.0 W
7. Channel Temperature : Tch = 150 °C
8. Storage Temperature : Tstg = 55 to +150 °C
9. Single Avalanche Current : IAS = 22 A
10. Single Avalanche Energy : EAS = 48 mJ

Pinout for K3918

Features

1. Low on-state resistance : RDS(on)1 = 7.5 mΩ MAX. (VGS= 10 V, ID= 24 A)
2. Low Ciss : Ciss= 1300 pF TYP.
3. 5 V drive available

Other data sheets are available within the file: 2SK3918, 2SK3918-ZK, K3918-ZK

Transistor

BD135 Datasheet – 45V, 1.5A, NPN Power Transistor – Philips

Description

Features

BD135 Datasheet PDF Download

K3918 Datasheet – 25V, 48A, N-Ch, Power MOSFET

K3918 Datasheet PDF

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