Part Number: BUZ11

Function: 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET

Package: TO-220AB Type

Manufacturer: Fairchild Semiconductor

Image and Pinouts:

 

Description

This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits.

Features

1. 30A, 50V
2. rDS(ON)= 0.040Ω
3. SOA is Power Dissipation Limited
4. Nanosecond Switching Speeds
5. Linear Transfer Characteristics
6. High Input Impedance
7. Majority Carrier Device
8. Related Literature
– TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

Absolute Maximum Ratings

1. Drain to Source Breakdown Voltage : VDS = 50 V
2. Drain to Gate Voltage (RGS= 20kΩ): VDGR = 50 V
3. Continuous Drain Current TC = 30’C : ID = 30 A
4. Pulsed Drain Current : IDM = 120 A
5. Gate to Source Voltage : VGS = ±20 V
6. Maximum Power Dissipation : PD = 75 W

Other data sheets are available within the file: BUZ11_NR4941

BUZ11 Datasheet PDF Download

Part Number: K1060, 2SK1060, 2SK1060-Z

Function: 100V, 5A, N-channel, MOSFET

Package: MP-3, MP3Z Type

Manufacturer: NEC

Image

Description

This is 100V, 5A, N-Channel MOSFET.

The 2SK1060, K1060 are N-Channel MOS Field Effect Power Transistor designed for solenoid, motor and lamp driver.

Features

1. 4V Gate Drive – Logic Level

2. Low Rds(on)

3. No Second Breakdown

4. Designed for Hybrid Integrated Circuits

Pinouts:

Absolute Maximum Ratings ( Ta = 25°C )

1. Drain to Source Voltage : Vdss = 100 V

2. Gate to Source Voltage : Vgss = ± 20 V

3. Drain Current ( Dc ) : Id(DC) = ± 5A

4. Storage temperature : Tch = 150 °C

5. Junction temperature : Tstg = -55 to +150 °C

 

K1060 Datasheet PDF Download

 

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