Transistor archives - Page 549 of 2673

Features

1. Collector-Emitter Voltage: VCEO = -60V

2. Collector Power Dissipation: PC (max) = 625mW

3 Suffix “-C” means Center Collector (1.Emitter 2.Collector 3.Base)

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = – 60 V

2. Collector to Emitter Voltage: Vceo = – 60 V

3. Emitter to Base Voltage: Vebo = – 5 V

4. Collector Current: Ic = – 600 mA

5. Collector Dissipation : Pc = 625 mW

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

Part Number: IRG4PC50S-P

Function: 600V, 70A, Standard Speed IGBT

Package: TO-247AC Type

Image and Pinouts:

IRG4PC50S-P datasheet

Description

The IRG4PC50S-P is 600V, 70A, IGBT. The IGBT is insulated-gate bipolar transistor.

1. Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz)

2. Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3

3. Industry standard TO-247AC package

4. Surface Mountable

Benefits :

1. Generation 4 IGBTs offer highest efficiency available

2. IGBTs optimized for specified application conditions

3. Designed to be a “drop-in” replacement for equivalent industry-standard Generation 3 IR IGBTs

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 600 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 70 A (Tc = 25°C)

4. Maximum Power Dissipation : Pc = 200 W

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Other data sheets are available within the file:

IRG4PC50S, IRG4PC50SP, IRG4PC50SPBF