Transistor

K4107 Datasheet PDF – 500V, 15A, N-Ch MOSFET – Toshiba

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Part Number: K4107, 2SK4107

Function  : Vdss=500V, 15A, N-Channel MOSFET , Transistor

Manufacturer: Toshiba

Image

K4107 mosfet transistor

Description

This is 500V, 15A, Silicon N-Channel MOS Field Effect Transistor.

Features

1. Low drain−source ON resistance  :  RDS (ON)= 0. 33 Ω(typ.)

2. High forward transfer admittance  :  |Yfs| = 8.5 S (typ.)

3. Low leakage current  :  IDSS= 100 μA (max) (VDS= 500 V)

4. Enhancement mode  : Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA)

Pinout

K4107 datasheet pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain−source voltage: VDSS = 500 V

2. Drain−gate voltage (RGS= 20 kΩ): VDGR = 500 V

3. Gate−source voltage: VGSS = ±30 V

4. Drain power dissipation (Tc = 25°C): PD = 150 W

5. Single-pulse avalanche energy : EAS = 765 mJ

6. Avalanche current : IAR = 15 A

7. Repetitive avalanche energy : EAR = 15 mJ

 

Applications:

1. Switching Regulator

 

K4107 Datasheet PDF


 

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K1317 Datasheet PDF – 1500V, 2.5A, N-Ch, MOSFET – Hitachi

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Part Number: K1317, 2SK1317

Function: 1500V, 2.5A, N-Channel MOSFET

Package: TO-3P Type

Manufacturer: Hitachi

Image

K1317 mosfet 2sk1317

Description

This is 1500V, 2.5A, Silicon N-Channel MOSFET.

Features

1. High breakdown voltage VDSS= 1500 V

2. High speed switching

3. Low drive current

4. No secondary breakdown

5.  Suitable for switching regulator, DC-DC converter and motor driver

 

Application

1. High speed power switching

 

Pinout

K1317 datasheet pinout

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 1500 V

2. Gate to source voltage : VGSS = ±20 V

3. Drain current : ID = 2.5 A

4. Drain peak current : ID(pulse) = 7A

5. Body to drain diode reverse drain current : IDR = 2.5 A

6. Channel dissipation: Pch = 100 W

7. Channel temperature: Tch = 150 °C

 

K1317 Datasheet PDF