This is one of the transistor types.

Part Number: C1971, 2SC1971

Function:

Package:  TO-220 Pin type

Manufacturer: Mitsubishi

Image

 

Description

The C1971 is a silicon NPN epitaxial planar type transistor designed for RF power amplifer on VHF band mobile radio applications.

Features

1. High power gain : Gpe >= 10dB

2. Emitter ballasted contruction, gold metallization for high reliability and good performances

3. Ability of withstanding more than 20:1 load VSWR when operated at Vcc = 15.2V, Po=6W, f = 175Mhz

 

Pinout

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 35 V

2. Collector to Emitter Voltage: Vceo = 17 V

3. Emitter to Base Voltage: Vebo = 4 V

4. Collector Current: Ic = 2 A

5. Collector Dissipation : Pc = 1.5 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

Applications:

1. 4 to 5 watts output power amplifiers in VHF band applications

 

C1971 Datasheet PDF

 

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Part Number: 2SD2120

Function: 80V, 2A, NPN Transistor

Package: NMP Type

Manufacturer: SANYO (Panasonic)

Image and Pinouts:

 

Description

The 2SD2120 is 80V, 2A, NPN Epitaxial Planar Silicon Transistor.

Features

1. Darlington connection ( Contains bias resistance, damper diode)
2. High DC current gain
3. Less dependence of DC current gain on temperature

Absolute Maximum Ratings at Ta = 25°C

1. Collector-to-Base Voltage : VCBO = 100 V
2. Collector-to-Emitter Voltage : VCEO = 80 V
3. Emitter-to-Base Voltage : VEBO = 6 V
4. Collector Current : IC = 2 A
5. Collector Current (Pulse) : ICP = 4 A
6. Collector Dissipation : PC = 1 W

Applications:

1. General Drvier

Other data sheets are available within the file: D2120

2SD2120 Datasheet PDF Download

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