K20T60 Datasheet – IKW20N60T, 600V, 20A, IGBT

This is one of the transistor types.

The IGBT is insulated-gate bipolar transistor.

Part Number: K20T60

Function: Low Loss DuoPack : IGBT in Trench and Fieldstop technology

Package: TO-220,  TO-263, TO-247 Type

Manufacturer: Infineon Technologies AG

Image:

K20T60 image 600V igbt

Description

This is IGBT.

IKP20N60T, IKB20N60T, IKW20N60T is Marking K20T60.

Features

1. Very low VCE(sat)1.5 V (typ.)
2. Maximum Junction Temperature 175 °C
3. Short circuit withstand time – 5µs
4. Designed for :
– Frequency Converters
– Uninterrupted Power Supply
5. Trench and Fieldstop technology for 600 V applications offers :
– very tight parameter distribution
– high ruggedness, temperature stable behavior
– very high switching speed
– low VCE(sat)
6. Positive temperature coefficient in VCE(sat)
7. Low EMI
8. Low Gate Charge
9. Very soft, fast recovery anti-parallel EmCon HE diode

K20T60 Pinout

K20T60 datasheet pdf

K20T60 Datasheet PDF


 

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MDS1660 Datasheet PDF – 30V, 11.2A, MOSFET – Magnachip

Part Number: MDS1660, MDS1660URH ( = AO4468 )

Function: 30V, 11.2A, Power Driver MOSFET

Package: SOP 8 Pin ( SMD )

Manufactueres : Magnachip

Image:

MDS1660 Datasheet

Description

This is 30V, 11.2A, N-Channel MOSFET.

The MDS1660 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance.

Pinout

MDS1660 pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 30 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 11.2 A

4. Power Dissipation: Pd = 3.1 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

MDS1660 Datasheet


 

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