5R520P Datasheet PDF – 500V, 7.1A, N-Ch, MOSFET

Part Number: 5R520P, IPP50R520CPXKSA1

Function: 500V, 7.1A, MOSFET

Package: TO-220 Type

Manufacturer: Infineon Technologies

Image and Pinouts:

5R520P datasheet

 

Description

The 5R520P is 500V, 7.1A, CoolMOS Power Transistor, MOSFET.

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CoolMOS CP, Infineon’s fifth series of CoolMOS, is designed for hard and soft switching topologies, CCM PFC as well as PWM for ATX, notebook adapter PDP and LCD TV.

 

Features

1. Lowest figure of merit RONx Qg

2. Ultra low gate charge

3. Extreme dv/dt rated

4. High peak current capability

5. Pb-free lead plating; RoHS compliant

6. Quailfied according to JEDEC for target applications

 

Applications:

1. Hard- & Soft switching SMPS topologies

2. DCM PFC for Lamp Ballast

3. PWM for Lamp Ballast, PDP and LCD TV

components

Other data sheets are available within the file: IPP50R520CP

5R520P Datasheet PDF Download

5R520P pdf

BLH3355 Datasheet PDF – 12V, 100mA, NPN Transistor

Part Number: BLH3355

Function: 12V, 100mA, NPN EPITAXIAL SILICON RF TRANSISTOR

Pakcage : Chip type or TO-92 Type

Manufacturer: SHANGHAI BELLING ( http://www.belling.com.cn )

Pinouts:

BLH3355 datasheet

 

Description

This is NPN RF Transistor. NPN epitaxial silicon RF transistor for microwave low-noise amplification.

Features

1. Low noise and high gain bandwidth product
2. High power gain

Structure :

1. Planar type
2. Electrodes: Aluminum alloy
3. Backside metal: Au alloy

BLH3355 transistor

Size :

1. Chip size: 370µm ×370µm
2. Chip thickness: 220±20µm.
3. Pad size: φ100µm

ABSOLUTE MAXIMUM RATING

1. VCBO Collector to Base Voltage : 20 V
2. VCEO Collector to Emitter Voltage : 12 V
3. VEBO Emitter to Base Voltage : 3.0 V
4. IC Collector Current : 100 mA
5. Ptot Total Power Dissipation: 200 mW
6. Tj Junction Temperature : 150 °C
7. Tstg Storage Temperature: −65 to +150 °C

Applications:

1. UHF / VHF wide band amplifier

Other data sheets are available within the file: BLH-3355

 

BLH3355 Datasheet PDF Download

BLH3355 pdf

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