50R380 Datasheet PDF – 500V, 11A, N-Ch, MOSFET

This is one of the types of MOSFETs and is a kind of transistor.

Part Number: MMD50R380PRH

Marking : 50R380

Function: 500V, 11A, N-Channel, MOSFET Transistor

Package: TO-252 ( DPAK ) Type

Manufacturer: Magnachip

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50R380 mosfet datasheet

Description

The 50R380 is power MOSFET using magnachip’s advanced super junction technology that can
realize very low on-resistance and gate charge. It will provide much high efficiency by using
optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.

Pinout

50R380 transistor pinout

Features

1. Low Power Loss by High Speed Switching and Low On-Resistance

2. 100% Avalanche Tested

3. Green Package – Pb Free Plating, Halogen Free

 

Absolute maximum ratings ( Ta=25°C )

1. Drain-Source voltage: VDSS = 500 V

2. Gate-Source voltage: VGSS = ±30 V

3. Continuous drain current : Id = 11 A

4. Power dissipation : Pd = 83 W

5. Single – pulse avalanche energy : Eas = 220 mJ

 

Applications:

1. PFC Power Supply Stages

2. Switching Applications

3. Adapter

4. Motor Control

5. DC – DC Converters

 

Other data sheets are available within the file: MMD50R380P, MMD50R380PRH

50R380 Datasheet PDF Download

50R380 pdf

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IRFP064N Datasheet PDF – 55V, 110A, MOSFET, Transistor

Part Number: IRFP064N

Function: HEXFET MOSFET ( 55V, 110A )

Package: TO-247AC type

Manufacturer:  IRF, Infineon ( https://www.infineon.com/  )

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IRFP064N mosfet datasheet

Description

This is 55V, 110A, HEXFET Power MOSFET.

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Pinout

IRFP064N transistor pinout

Features

1. Advanced Process Technology

2. Ultra Low On-Resistance

3. Dynamic dv/dt Rating

4. 175°C Operating Temperature

5. Fast Switching

6. Fully Avalanche Rated

Absolute maximum ratings ( Ta=25°C )

0. Drain-to-Source Breakdown Voltage : Vdss = 55 V

1. Continuous Drain Current, Id = 110 A

2. Power Dissipation: Pd = 200 W

3. Gate-to-Source Voltage : Vgs = ± 20 V

4. Single Pulse Avalanche Energy : Eas = 480 mJ

5. Avalanche Current : Iar = 59 A

Other data sheets are available within the file: IRFP064

IRFP064N Datasheet PDF Download

IRFP064N pdf

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