Part Number: K2850-01

Function: 900V, 6A, Power MOSFET

Package: TO-3P Type

Manufacturer: Fuji Electric

Image:

 

Description

This is 900V, 6A, N-Channel enhancement mode power MOSFET.

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 900 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 6 A

4. Maximum Power Dissipation: Pd = 125 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Pinouts:

Applications:

1. Swtiching

Other data sheets are available within the file: 2SK2850-01

 

K2850-01 Datasheet PDF Download

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• General-Purpose Operational Amplifier

Part Number: IRF9410

Function: HEXFET power MOSFET. VDSS = 30V, RDS(on) = 0.030 Ohm.

Package: SO-8 Type

Manufacturer: International Rectifier

Image and Pinouts:

 

Description

This is 30V, 7A, HEXFET Power MOSFET.

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Features

1. Generation V Technology

2. Ultra Low On-Resistance

3. N-Channel MOSFET

4. Surface Mount

5. Very Low Gate Charge and Swiching Losses

6. Fully Avalanche Rated

7. Lead-Free

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 30 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 7 A

4. Maximum Power Dissipation: Pd = 2.5 W (Tc = 25°C)

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Other data sheets are available within the file: IRF9410TRPBF, IRF9410PbF

 

IRF9410 Datasheet PDF Download