Transistor

C536 Datasheet PDF – 30V, 100mA, NPN Transistor, 2SC536

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This is one of the transistor types.

Part Number: C536, 2SC536

Function: 30V, 100mA, NPN Transistor

Package: TO-92 Type

Manufacturer: WEJ

Image

C536 image

Description

This is 30V, 100mA, Silicon NPN Transistor.

 

Features

1. Power dissipation PCM : 400 mW (Tamb=25 °C)

2. Collector current ICM : 100 mA

3. Collector-base voltage V(BR)CBO : 40 V

4. Collector-emitter breakdown voltage V(BR)CEO : 30 V

5. Emitter-Base breakdown voltage V(BR)EBO : 5 V

6. Operating and storage junction temperature range TJ, Tstg : -55 °C to +150 °C

7.  Large current capacity and wide ASO.

Pinout

C536 datasheet

Applications

1. Capable of being used in the low frequency to high frequency range.

 

C536 Datasheet PDF


 

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9D5N20P Datasheet – 200V, N-ch MOSFET – KEC

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This is one of the types of MOSFETs and is a kind of transistor.

Part Number: 9D5N20P, KHB9D5N20P

Function: N Channel MOS Field Effect Transistor

Package: TO-220AB Type

Manufacturer: KEC

Image  

9D5N20P image

Decription

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switch mode power supplies.

Features

1. VDSS=200V, ID=9.5A

2. Drain-Source ON Resistance : R DS(ON)=400mΩ@VGS= 10V

3. Qg(typ.)=18.5nC

Pinout

9D5N20P datasheet

Absolute Maximum Ratings (Tc = 25°C)

1. Drain to source voltage: VDSS = 200 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 9.5 A
4. Drain Power Dissipation: Pd = 87 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C

9D5N20P Datasheet


 

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