Transistor archives - Page 849 of 2673

Features

1. Trench gate technology (G5H series)

2. Low collector to emitter saturation voltage VCE(sat)= 1.7 V typ

3. High speed switching tf = 150 ns typ

4. Low leak current ICES= 1 μA max

5. High Speed Power Switching / Vce(sat) = 1.7V typ

Absolute Maximum Ratings :

1. Collector to emitter voltage : VCES = 360 V

2. Gate to emitter voltage : VGES = ±30 V

3. Collector current : Ic = 35 A

4. Collector peak current : ic(peak) = 200 A

5. Collector dissipation : PC = 50 W

Applications:

1. High Speed Power Switching

Other data sheets are available within the file: RJP30E2DPK, RJP30E2

This is one of the transistor types.

Part Number: BC548

Function : 500mA, 30V, NPN General Purpose Amplifier

Package: TO-92 Type

Manufacturer: Fairchild Semiconductor

This post explains for the semiconductor BC548.

Image

Description

This is 30V, 500mA, NPN General Purpose Amplifier.

This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 10. See PN100A for characteristics.

Features

1. Switching and Amplifier

2. High-Voltage : BC546, Vceo = 65V

3. Low-Noise : BC548, Vceo = 30V, BC549, BC550

BC548 Pinout

Absolute Maximum Ratings

1. Collector-Base Voltage: Vcbo = 30V
2. Collector-Emitter Voltage: Vceo = 30V
3. Emitter-Base Voltage: Vebo = 5V
4. Collector Current (DC) : Ic = 500mA
5. Total Device Dissipation: Pd = 625mW
6. Storage Junction Temperature Range : Tstg = -55 to 150°C
7. Operating Junction Temperature Range : Tj = -55 to 150°C

Other data sheets are available within the file: BC548A, BC548B, BC548C

Transistor

RJP30E2DPK-M0 Datasheet PDF – 360V, 35A, N-Channel IGBT

Description

Features

RJP30E2DPK-M0 Datasheet PDF Download

BC548 Datasheet PDF – 30V, 0.5A, NPN Transistor – Fairchild

Description

Features

BC548 Datasheet

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