Part Number: RJP30E2DPK-M0
Function: 360V, 35A, Silicon N Channel IGBT
Package: TO-3PSG Type
Manufacturer: Renesas Electronics
Image and Pinouts:
Description
This is 360V, 35A, Silicon N Channel IGBT.
The IGBT is insulated-gate bipolar transistor.
Features
1. Trench gate technology (G5H series)
2. Low collector to emitter saturation voltage VCE(sat)= 1.7 V typ
3. High speed switching tf = 150 ns typ
4. Low leak current ICES= 1 μA max
5. High Speed Power Switching / Vce(sat) = 1.7V typ
Absolute Maximum Ratings :
1. Collector to emitter voltage : VCES = 360 V
2. Gate to emitter voltage : VGES = ±30 V
3. Collector current : Ic = 35 A
4. Collector peak current : ic(peak) = 200 A
5. Collector dissipation : PC = 50 W
Applications:
1. High Speed Power Switching
Other data sheets are available within the file: RJP30E2DPK, RJP30E2
RJP30E2DPK-M0 Datasheet PDF Download
