Transistor

RN2304 Datasheet PDF – 50V, 100mA, PNP Transistor

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Part Number: RN2304

Function: Silicon PNP Epitaxial Type Transistor (PCT Process)

Package: SC-70, 2-2E1A Type

Manufacturer: Toshiba

Image :

RN2304 datasheet

 

Description

This is 50V, 100mA, Silicon PNP Epitaxial Type Transistor.

Applications:

1. Switching, Inverter Circuit, Interface Circuit and  Driver Circuit

Bias Resistor Values

Type No. R1 (kΩ) R2 (kΩ)
RN2301 4.7 4.7
RN2302 10 10
RN2303 22 22
RN2304 47 47
RN2305 2.2 47
RN2306 4.7 47

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = – 50 V

2. Collector to Emitter Voltage: Vceo = – 50 V

3. Emitter to Base Voltage: Vebo = – 10 V

4. Collector Current: Ic = – 100 mA

5. Collector Dissipation : Pc = 100 mW

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

Text :

RN2301~RN2306 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Complementary to RN1301~1306 Unit: mm Equivalent Circuit Bias Resistor Values Type No. RN2301 RN2302 RN2303 RN2304 RN2305 RN2306 R1 (kΩ) 4.7 10 22 47 2.2 4.7 R2 (kΩ) 4.7 10 22 47 47 47

RN2301~2304 RN2305, 2306 RN2301~2306 RN2301~2306 RN2301 RN2302 Input resistor RN2303 RN2304 RN2305 RN2306 RN2301~2304 Resistor ratio RN2305 RN2306 R1/R2 R1 VI (OFF) fT Cob VI (ON) VCE (sat) hFE IEBO Symbol ICBO ICEO Test Circuit  [ … ]

 

Pinout

RN2304 pinout

 

RN2304 Datasheet PDF Download


RN2304 pdf

Other data sheets are available within the file: RN2301, RN2302, RN2303, RN2305

T40N03G Datasheet PDF – 45A, 25V, N-Ch, MOSFET

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This is one of the types of MOSFETs and is a kind of transistor.

Part Number: T40N03G

Function: Power MOSFET 45 A, 25 V, N−Channel

Package: DPAK Type

Manufacturer: ON Semiconductor

Image :

T40N03G datasheet

 

Description

This is Power MOSFET, 45 AMPERES, 25 VOLTS RDS(on) = 12.6 m (Typ).

Features

1. Planar HD3e Process for Fast Switching Performance

2. Low RDS(on) to Minimize Conduction Loss

3. Low Ciss to Minimize Driver Loss

4. Low Gate Charge

5. Optimized for High Side Switching Requirements in High-Efficiency DC-DC Converters

6. These are Pb−Free Devices

Pinout:

T40N03G pinout

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 25 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 32 A

4. Total Power Dissipation: Pd = 9.2 A

5. Channel temperature: Tch = 175 °C

6. Storage temperature: Tstg = -55 to +175 °C

[ … ]

Other data sheets are available within the file: NTD40N03R

T40N03G Datasheet PDF Download


T40N03G pdf