Transistor

13003BR Datasheet – 400V, 1A, NPN Transistor

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Part Number: 13003BR

Function: MJE / MJE SERIES, 400V, 1A, NPN TRANSISTOR

Package: TO-126, TO-126S Type

Manufacturer: Shenzhen SI Semiconductors

Image and Pinouts:

13003BR datasheet

 

Description

This is 400V, 1A, NPN TRANSISTOR.

Features

1. HIGH VOLTAGE CAPABILITY

2. HIGH SPEED SWITCHING

3. WIDE SOA

4. RoHS COMPLIANT

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 600 V

2. Collector to Emitter Voltage: Vceo = 400 V

3. Emitter to Base Voltage: Vebo = 9 V

4. Collector Current: Ic = 1 A

5. Collector Dissipation : Pc =20 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -65 ~ +150°C

 

components

Applications:

1. FLUORESCENT LAMP

2. ELECTRONIC BALLAST

Other data sheets are available within the file: MJE13003BR

13003BR Datasheet PDF Download

13003BR pdf

2SK1272 MOSFET – 60V, 1A, Transistor ( Datasheet PDF )

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Part Number: 2SK1272

Function: 60V, 1A, MOS Field Effect Transistor

Package: TO-92 Type

Manufacturer: NEC (Renesas Technology)

Image and Pinouts:

2SK1272 datasheet

 

Description

The 2SK1272, N-channel vertical type MOS FET, is a switching device which can be driven directly by the output of ICs having a 5V power source. The MOSFET has excellent switching characteristics and is suitable for use as a high-speed switching device in digital circuits.

Features

1. Directly driven by ICs having a 5V power source.

2. Not necessary to consider driving current because of its high input impedance

3. Possible to reduce the number of parts by omitting the bias resistor.

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 60 V

2. Gate to source voltage: VGSS = ± 20

3. Drain current: ID = 1 A

4. Total Power Dissipation : Pt = 750 mW

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

2SK1272 Datasheet PDF Download


2SK1272 pdf

Other data sheets are available within the file: K1272