Part Number: TK30A06J3A
Function: 60V, 30A, N-Channel MOSFET
Package: TO-220 Type
Manufacturer: Toshiba
Image and Pinouts:
Description
This is 60V, 30A, Silicon N Channel MOSFET.
Features
1. Low drain-source ON-resistance: RDS (ON)= 19 mΩ(typ.)
2. High forward transfer admittance: |Yfs| = 34 S (typ.)
3. Low leakage current: IDSS= 10 μA (max) (VDS= 60 V)
4. Enhancement mode: Vth= 1.3 to 2.5 V (VDS= 10 V, ID= 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 60 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 30 A
4. Drain Power Dissipation: Pd = 25 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Applications
TK30A06J3A Datasheet PDF
Other data sheets are available within the file: K30A06J3, TK30A06J3A