Part Number: TK5A50D
Function: 500V, Silicon N-Channel MOSFET
Package: SC-67, 2-10U1B, TO-220 type
Manufacturer: Toshiba
Image
Pinouts: 1. Gate 2. Drain 3. Source
Description
TK5A50D is Silicon N Channel MOS Type Field Effect Transistor.
Features
• Low drain-source ON-resistance: RDS (ON) = 1.3 Ω (typ.)
• High forward transfer admittance: ⎪Yfs⎪ = 3.0 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 500 V)
• Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 500 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 5 A
4. Drain Power Dissipation: Pd = 35 W (Tc = 25°C)
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Applications:
1. Switching Regulator
Other data sheets are available within the file: 5A50D
TK5A50D Datasheet PDF Download
