Part Number: TK6P60W
Function: 600V, Silicon N-Channel MOSFET
Package: D-PAK Type
Manufacturer: Freescale
Images:
Description
This is 600V, Silicon N-Channel MOSFET (DTMOS).
Features
(1) Low drain-source on-resistance: RDS(ON) = 0.68 Ω (typ.) by used to Super Junction Structure : DTMOS
(2) Easy to control Gate switching
(3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.31 mA
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 600V
2. Gate to source voltage: VGSS = ± 30V
3. Drain current: ID = 6.2A
4. Power dissipation: Pd = 60 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Applications:
1. Switching Voltage Regulators
