UTC8050S PDF – 20V, 700mA, NPN Transistor ( Datasheet )

Part Number: UTC8050S

Function: 20V, 700mA, NPN Epitaxial Silicon Transistor

Package: TO-92 Type

Manufacturer: Unisonic Technologies

Images:

UTC8050S pdf pinout datasheet

Description

The UTC8050S is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio amplifier and general purpose applications.

A Silicon NPN Epitaxial Planar Transistor is a type of bipolar junction transistor (BJT) made from silicon, a semiconductor material. This transistor is designed for amplifying or switching electronic signals in various electronic circuits.

NPN Configuration:

1. Emitter (N): The heavily doped N-type layer, which is the source of charge carriers (electrons) in the transistor.

2. Base (P): The thin P-type layer, which controls the flow of charge carriers between the emitter and collector.

3. Collector (N): The N-type layer, which collects the charge carriers that pass through the base-emitter junction.

Silicon NPN Epitaxial Planar Transistors are fundamental components in electronic circuits, playing a crucial role in amplification, signal processing, and digital logic. They are widely used in a vast array of electronic devices, including radios, amplifiers, computer processors, and many other applications where signal control and amplification are essential.

Features

1. Collector current up to 700mA

2. Collector-Emitter voltage up to 20 V

3. Complementary to UTC 8550S

 

2 page
pinout

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 30 V

2. Collector to Emitter Voltage: Vceo = 20 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 700 mA

5. Collector Dissipation : Pc = 1 w

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -65 ~ +150°C

UTC8050S PDF Datasheet