Part Number: W11NB80, STW11NB80
Function: N-Channel MOSFET, 800V, 11A
Package: TO-247 Type
W11NB80 is 800V, 11A, N-Channel Power MOSFET. An N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.
When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals.
N-channel MOSFETs are widely used in a variety of electronic applications due to their high input impedance, fast switching speeds, and low power consumption. They are commonly used as switches, amplifiers, and voltage regulators.
Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an
advanced family of power MOSFETs with outstanding performances. The new patent
pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
1. TYPICAL RDS(on) = 0.65 Ω
2. EXTREMELY HIGH dv/dt CAPABILITY
3. ± 30V GATE TO SOURCE VOLTAGE RATING
4. 100% AVALANCHE TESTED
5. VERY LOW INTRINSIC CAPACITANCES
6. GATE CHARGE MINIMIZED
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 800 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 11 A
4. Total Power Dissipation : Ptot = 190 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -65 to +150 °C