Part Number: YTA630
Function: 200V, 10A, N-CHANNEL, Si, POWER, MOSFET
Package: TO-220AB Type
Manufacturer: Toshiba
Pinouts:
Description
This is 200V, 10A, N-Channel MOSFET.
Features
1. Low Drain-Source On Resistance : Rds(on) = 0.26Ohm(Typ.)
2. High Forward Transfer Admittance : | Yfs | = 8S(Typ.)
3. Low Leakage Current : Idss = 100uA (Max.) (Vds = 200V)
4. Enhancement-Mode : Vth = 1.5 ~ 3.5V (Vds =10V, Id = 1mA)
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 200 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 10 A
4. Drain Power Dissipation: Pd = 40 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Other data sheets are available within the file: YTA-630
YTA630 Datasheet PDF Download
