Part Number: 13N06L
Function: 60V, N-Channel QFET MOSFET
Package: TO-220 Type
Manufacturer: Fairchild Semiconductor
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.
• 13.6 A, 60 V, RDS(on)= 110 mΩ(Max.) @ VGS= 10 V ID= 6.8 A
• Low Gate Charge (Typ. 4.8 nC)
• Low Crss (Typ. 17 pF)
• 100% Avalanche Tested
• 175°C Maximum Junction Temperature Rating
13N06L Datasheet PDF Download
Other data sheets are available within the file: FQP13N06L