13N06L Datasheet – N-Ch, MOSFET, Transistor (FQP13N06L)

Part Number: 13N06L

Function: 60V, N-Channel QFET MOSFET

Package: TO-220 Type

Manufacturer: Fairchild Semiconductor


13N06L datasheet



These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.


• 13.6 A, 60 V, RDS(on)= 110 mΩ(Max.) @ VGS= 10 V ID= 6.8 A
• Low Gate Charge (Typ. 4.8 nC)
• Low Crss (Typ. 17 pF)
• 100% Avalanche Tested
• 175°C Maximum Junction Temperature Rating


13N06L Datasheet PDF Download

Other data sheets are available within the file: FQP13N06L


13N06L pdf