2N5401 Transistor – PNP, (-)150V, (-) 600mA, TO-92

What is 2N5401?

This is a PNP bipolar junction transistor (BJT) designed for general-purpose amplifier and switching applications. It has a maximum collector current rating of 0.6A, a maximum collector-emitter voltage rating of 150V, and a maximum power dissipation rating of 625mW.

Part Number: 2N5401

Function: -150V, -600mA, PNP Silicon Transistor

Package: TO-92 Type

Manufacturer: ISC, NTE, NXP, AuK

Pinouts:

2N5401 datasheet

 

Description

This is General Purpose Si-Epitaxial Planar PNP Transistor. he 2N5401 comes in a TO-92 package and has a low noise figure, making it suitable for use in audio amplifier circuits.

• General purpose amplifier
• High voltage application

Features

• High collector breakdown voltage : VCBO= -160V, VCEO= -160V
• Low collector saturation voltage : VCE(sat)=-0.5V(MAX.)
• Complementary pair with 2N5551
• Junction Temperature: Tj = 150°C
• Storage Temperature: Tsg = -55 ~ +150°C

Advantage Vs disadvantage

Advantage:

1. High voltage and current handling capabilities

2. Low noise and distortion for use in audio amplifier circuits

3. Low power dissipation for efficient operation

4. Availability and cost-effectiveness

Disadvantage:

1. Limited maximum current rating, which makes it unsuitable for high power applications

2. Relatively low maximum frequency rating, which makes it unsuitable for high-speed applications

3. Limited gain bandwidth product, which limits its use in high-frequency amplification circuits

 

Other data sheets are available within the file: N5401

2N5401 Datasheet PDF Download


2N5401 pdf

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