Part Number: 2SA1967
Function: – 900V, – 10mA, PNP Transistor
Package: TO-220AB Type
Manufacturer: SANYO (Panasonic)
Image and Pinouts:
Description
This is NPN Triple Diffused Planar Silicon Transistor.
Features
1. High breakdown voltage (Vceo min=–900V).
2. Small Cob(Cobtyp=2.2pF).
3. High reliability (Adoption of HVP process).
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = – 900 V
2. Collector to Emitter Voltage: Vceo = – 900 V
3. Emitter to Base Voltage: Vebo = – 7 V
4. Collector Current: Ic = – 10 mA
5. Total Dissipation : Pc = 1.75 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C
Applications:
1. High-Voltage Amplifier
2. High-Voltage Switching
2SA1967 Datasheet PDF Download
Other data sheets are available within the file: 2SA-1967, A1967