2SC1971 Datasheet PDF – RF Power Amplifier – Mitsubishi

Part Number: 2SC1971

Function: RF Power Transistor / NPN Epitaxail Planar Type

Package: TO220 Type, TO-30E



2SC1971 datasheet RF Power Amplifier


2SC1971 is a silicon NPN epitaxail planar type transistor designed for RF Power Amplifiers on VHF band mobile radio applications.

2SC1971 pinout


1. Emitter ballasted construction, gold metallization for high reliability and good performances.

2. TO-220 package similar is combinient for mounting.

3. High power gain : Gpe > 10 dB

4. Ability of withstanding more than 20:1 load VSWR



4 to 5 watts output power amplifiers in VHF band applications.


Absolute Maximum Ratings

1. Collector to base voltage : Vcbo = 35 V
2. Emitter to base voltage : Vebo = 4 V
3. Collector to emitter voltage : Vceo = 17 V
4. Collector current : Ic = 2 A


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2SC1971 Datasheet PDF Download



2SC1971 pdf

Other data sheets are available within the file: C1971