Part Number: 2SK1925
Function: 600V, 8A, N-Channel MOSFET, Transistor
Package: TO-3PB Type
Manufacturer: SANYO (Panasonic)
Image and Pinouts:
Description
The 2SK1925 is 600V, 8A, N-Channel MOSFET. In an N-channel MOSFET, the source and drain terminals are connected to an N-type semiconductor material, while the gate terminal is insulated from the channel by a thin oxide layer. When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals.
N-channel MOSFETs are widely used in a variety of electronic applications due to their high input impedance, fast switching speeds, and low power consumption. They are commonly used as switches, amplifiers, and voltage regulators.
Features
1. Low ON resistance
2. Very high-speed switching
3. High-speed diode (trr = 150ns)
Absolute Maximum Ratings at Ta = 25°C
1. Drain-to-Source Voltage : VDSS = 600 V
2. Gate-to-Source Voltage : VGSS = ±30 V
3. Drain Current (DC) : ID = 8 A
4. Drain Current (pulse) : IDP = 32 A
5. Allowable Power Dissipation : PD = 2.5 W
Applications
1. Very High-Speed Switching
Other data sheets are available within the file: K1925
2SK1925 Datasheet PDF Download
