Part Number: 2SK3919
Function: 64A, 25V, SWITCHING N-CHANNEL POWER MOSFET
Package: TO-251, TO-252 Type
Manufacturer: NEC ( Renesas Technology )
Pinouts:
Description
The 2SK3919 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
Features
1. Low on-state resistance : RDS(on)1 = 5.6 mΩ MAX. (VGS = 10 V, ID = 32 A)
2. Low Ciss: Ciss = 2050 pF TYP.
3. 5 V drive available
Ordering Inforamtion
Absolute maximum ratings ( Ta=25°C )
1. Drain to Source Voltage (VGS = 0 V) : VDSS = 25 V
2. Gate to Source Voltage (VDS = 0 V) : VGSS = ±20 V
3. Drain Current (DC) (TC = 25°C) : ID(DC) = ±64 A
4. Drain Current (pulse) : ID(pulse) = ±256 A
5. Total Power Dissipation (TC = 25°C) : PT1 = 36 W
6. Total Power Dissipation : PT2 = 1.0 W
7. Channel Temperature : Tch = 150 °C
8. Storage Temperature : Tstg = -55 to +150 °C
9. Single Avalanche Current : IAS = 27 A
10. Single Avalanche Energy : EAS = 73 mJ
Other data sheets are available within the file: 2SK3919-ZK, K3919, K3919-ZK
2SK3919 Datasheet PDF Download
