This is a kind of IGBT. The IGBT is insulated-gate bipolar transistor.
IGBT stands for Insulated Gate Bipolar Transistor. It is a type of semiconductor device that combines the characteristics of a bipolar junction transistor (BJT) and a metal-oxide-semiconductor field-effect transistor (MOSFET). IGBTs are widely used in various applications, including power electronics and motor control systems.
The IGBT is designed to handle high voltage and high current levels, making it suitable for switching and amplification of power in electronic circuits. It offers low on-state voltage drop and high switching speed, making it more efficient than traditional power transistors.
Part Number: 30F126, GT30F126
Function: LCD Plasma common tube, IGBT 200A, 330V IGBT
Manufactuers : Toshiba
Package: TO-220F Type
Image:
30F126 Datasheet
The Toshiba discrete IGBTs
(1) IGBTs also featuring fast switching
(2) Low collector-emitter saturation voltage even in the large current area
(3) IGBTs featuring a built-in diode with optimal characteristics tailored to specific applications
(4) High input impedance allows voltage drives
(5) Available in a variety of packages
Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131)
Reference Datasheet Download : [ 30F124.pdf ]
On the other hand, the IGBT structure consists of a pnp bipolar transistor and a collector contact made on the p+ layer. The IGBT has a low on-state voltage drop due to conductivity modulation. The following figure shows the VCE(sat) curve of a soft-switching 900-V IGBT. Toshiba has offered IGBTs featuring fast switching by using carrier lifetime control techniques.
One important feature of IGBTs is their ability to handle high current levels while being controlled by low-power signals. This allows them to be driven by microcontrollers or other low-power control circuitry. The combination of high voltage and current handling capability, along with efficient switching characteristics, makes IGBTs suitable for power conversion and control applications.
