30F126 Datasheet PDF – 330V, 200A – Toshiba IGBT

This is a kind of IGBT. The IGBT is insulated-gate bipolar transistor.

IGBT stands for Insulated Gate Bipolar Transistor. It is a type of semiconductor device that combines the characteristics of a bipolar junction transistor (BJT) and a metal-oxide-semiconductor field-effect transistor (MOSFET). IGBTs are widely used in various applications, including power electronics and motor control systems.

The IGBT is designed to handle high voltage and high current levels, making it suitable for switching and amplification of power in electronic circuits. It offers low on-state voltage drop and high switching speed, making it more efficient than traditional power transistors.

Part Number: 30F126, GT30F126

Function: LCD Plasma common tube,  IGBT  200A, 330V IGBT

Manufactuers : Toshiba

Package: TO-220F Type



30F126 Image

30F126 Datasheet

The Toshiba discrete IGBTs

are available in high-voltage and high-current ratings. They are used in inverter and power conversion circuits for such diverse applications as motor drivers, uninterruptible power supply (UPS) systems, IH cookers, plasma display panels (PDPs), strobe flashes and so on.

(1) IGBTs also featuring fast switching
(2) Low collector-emitter saturation voltage even in the large current area
(3) IGBTs featuring a built-in diode with optimal characteristics tailored to specific applications
(4) High input impedance allows voltage drives
(5) Available in a variety of packages

30F126 Datasheet


Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131)

Reference Datasheet Download : [ 30F124.pdf ]

IGBT Datasheet

On the other hand, the IGBT structure consists of a pnp bipolar transistor and a collector contact made on the p+ layer. The IGBT has a low on-state voltage drop due to conductivity modulation. The following figure shows the VCE(sat) curve of a soft-switching 900-V IGBT. Toshiba has offered IGBTs featuring fast switching by using carrier lifetime control techniques.

One important feature of IGBTs is their ability to handle high current levels while being controlled by low-power signals. This allows them to be driven by microcontrollers or other low-power control circuitry. The combination of high voltage and current handling capability, along with efficient switching characteristics, makes IGBTs suitable for power conversion and control applications.

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