Part Number: 30G120ASW
Function: N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Package: TO-3P Type
Manufacturer: Advanced Power Electronics Corp
Image:
Description
This is 1200V, 30A, N-Channel IGBT.
Features
1. High Speed Switching
2. Low Saturation Voltage : Typical V CE(sat) = 2.9V at Ic = 30A
3. RoHS-compliant, halogen-free TO-3P package
4. Internal “Co-Pak” Fast Recovery Diode
Pinouts:
Absolute Maximum Ratings (Ta = 25°C)
1. Collector to emitter voltage: Vces = 1200 V
2. Gate to emitter voltage: Vges = ± 30 V
3. Continuous Collector Current: Ic = 30 A (Tc = 100°C)
4. Maximum Power dissipation : Pd = 208 W
5. Junction temperature : Tj = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
30G120ASW Datasheet PDF Download
Datasheet Download : [ AP30G120ASW-HF-3.PDF ]
