Part Number: 50J322
Function: SILICON N CHANNEL MOST TYPE IGBT
Manufacturer: Toshiba
Image and Pinouts:
Description
This is 600V, 50A, The 4TH Generation IGBT.
Features
1. FRD Included Between Emitter and Collector
2. Enhancement-Mode
Absolute Maximum Ratings (Ta = 25°C)
1. Collector to emitter voltage: Vces = 600 V
2. Gate to emitter voltage: Vges = ± 20 V
3. Collector current : Ic = 50 A
4. Collector dissipation : Pc = 130 W
5. Junction temperature : Tj = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Applications:
1. Current Resonance Inverter Switching
Other data sheets are available within the file: GT50J322
50J322 Datasheet PDF Download
