9916H PDF Datasheet – 18V, 35A, N-Ch Power MOSFET

Part Number: 9916H, AP9916H

Function: N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Package: TO-252(H), TO-251(J) Type

Manufacturer: Advanced Power Electronics

Images:

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mosfet 9916H pdf datasheet

Description

9916H is N-Channel Power MOSFET. An N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals.

The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

Features

1. Low on-resistance

2. Capable of 2.5V gate drive

3. Low drive current

4. Single Drive Requirement

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transistor 9916H AP9916H

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 18 V

2. Gate to source voltage: VGSS = ± 12 V

3. Total Power Dissipation: Pd = 50 W

4. Channel temperature: Tch = 150 °C

5. Storage temperature: Tstg = -55 to +150 °C

9916H PDF Datasheet

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