9997GH MOSFET, Transistor – 100V, 11A, N-Ch (AP9997GH)

Part Number: 9997GH

Function: N-channel Enhancement-mode Power MOSFET

Package: TO-252 Type

Manufacturer: Advanced Power Electronics Corp

9997GH datasheet


Advanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,low on-resistance and cost-effectiveness.

The 9997GH is in the TO-252 package which is widely preferred for commercial and industrial surface mount applications such as medium-power DC/DC converters. The through-hole TO-251 version (AP9997GJ-HF-3) is available where a small PCB footprint is required.


1. Simple Drive Requirement

2. Lower Gate Charge

3. Fast Switching Characteristic

4. RoHS Compliant & Halogen-Free


Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 100 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 11 A

4. Total Power Dissipation: Pd = 2 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C


9997GH Datasheet PDF Download

9997GH pdf

Other data sheets are available within the file: 9997J-HF-3, AP9997GH, AP9997J-HF-3