K2350 PDF Datasheet – 200V, 8.5A, N-ch, MOSFET – Toshiba

This post explains for the MOSFET.

The Part Number is K2350, 2SK2350.

The function of this semiconductor is 200V, 8.5A, N-Channel MOSFET.

The package is TO-220 Type.

Manufacturer: Toshiba Semiconductor

Preview images :

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K2350 pdf pinout


K2350 is Silicon N Channel MOS Type Field Effect Transistor.

An N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals.

N-channel MOSFETs are widely used in a variety of electronic applications due to their high input impedance, fast switching speeds, and low power consumption. They are commonly used as switches, amplifiers, and voltage regulators.


1. 4-V gate drive

2. Low drain−source ON-resistance : RDS (ON) = 0.26 Ω (typ.)

3. High forward transfer admittance : |Yfs| = 8 S (typ.)

4. Low leakage current : IDSS = 100 μA (max) (VDS = 200 V)

5. Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)


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K2350 datasheet transistor

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 200 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 8.5 A

4. Drain Power Dissipation: Pd = 30 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C



1. Switching Regulator

2. DC−DC Converter and Motor Drive

K2350 PDF Datasheet