Part Number: A1020
Function: – 50V, – 2A, Silicon PNP Epitaxial Transistor
Package: TO-92MOD Type
Manufacturer: Toshiba
Images:
Description
A1020 is Silicon PNP Epitaxial Transistor. The 2SA1020 is designed for use in power amplifier applications and power switching applications.
A PNP transistor is a type of bipolar junction transistor (BJT) with a different structure and polarity compared to an NPN transistor.
1. Structure: A PNP transistor has a sandwich-like structure, consisting of a thin N-type layer (base) sandwiched between two P-type layers (emitter and collector).
2. Polarity: In a PNP transistor, the majority charge carriers are holes, which flow from the emitter to the collector. The emitter is negative relative to the base, and the collector is positive relative to the base.
3. Current flow: When a small current is applied to the base terminal, it allows a much larger current to flow from the emitter to the collector. This is called amplification or gain, and it makes the PNP transistor useful as an electronic switch or amplifier.
Features
• Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A)
• High-speed switching: tstg = 1.0 µs (typ.)
• Complementary to 2SC2655 […]
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = – 50 V
2. Collector to Emitter Voltage: Vceo = – 50 V
3. Emitter to Base Voltage: Vebo = – 5 V
4. Collector Current: Ic = – 2 A
5. Collector Dissipation : Pc = 900 mW
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C
Applications:
1. Power Amplifier
2. Power Switching Applications
