AD7572 Datasheet – High Speed 12-Bit ADC

The AD7572 is a complete, 12-bit ADC that offers high speed performance combined with low, CMOS power levels. This IC uses an accurate, high speed DAC and comparator in a successive-approximation loop to achieve a fast conversion time.

Part Number: AD7572AJN10

Function: High Speed 12-Bit ADC

Package: DIP 24 Pin Type, PLCC 28 Pin Type

Manufacturer: Analog Devices

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AD7572 datasheet pdf

Description

The AD7572 is a high-speed 12-bit analog-to-digital converter (ADC) manufactured by Analog Devices. An on-chip, buried Zener diode provides a stable reference voltage to give low drift performance over the full temperature range and the specified accuracy is achieved without any user trims. An on-chip clock circuit is provided, which may be used with a crystal for stand-alone operation, or the clock input may be driven from a external clock source such as a divided-down microprocessor clock. The only other external components required for basic operation of the AD7572 are decoupling capacitors for the supply voltages and reference output.

Features

1. 12-Bit Resolution and Accuracy

2. Fast Conversion Time

– AD7572XX06: 5 µs

– AD7572XX12: 12.5 µs

3. Complete with On-Chip Reference

4. Fast Bus Access Time: 90 ns

5. Low Power: 135 mW

Pinouts

AD7572 pinout

Applications

1. Require high-speed and high-resolution analog-to-digital conversion, such as data acquisition systems

2. Instrumentation, medical imaging equipment, and industrial automation.

AD7572 Datasheet PDF

IRLR3105 MOSFET – 55V Single N-Channel MOSFET

IRLR3105 is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for use in power management applications, particularly in switching circuits. It is a member of the HEXFET series of power MOSFETs manufactured by Infineon Technologies.

Part Number: IRLR3105PbF, IRLU3105PbF

Function: 55V Single N-Channel Power MOSFET

Package: D-Pak Type

Manufacturer: IR, Infineon Technologies

Image and pinouts

IRLR3105 datasheet pdf

Description

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Features

1. Planar cell structure for wide SOA

2. Optimized for broadest availability from distribution partners

3. Product qualification according to JEDEC standard

4. Silicon optimized for applications switching below <100kHz

5. Industry standard through-hole power package

Benefits

1. Increased ruggedness

2. Wide availability from distribution partners

3. Industry standard qualification level

4. High performance in low frequency applications

5. Standard pinout allows for drop in replacement

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage : VDSS = 55 V

2. Gate to source voltage : VGSS = ± 16 V

3. Drain current : ID = 25 A

4. Drain power dissipation : PD = 57 W

5. Single pulse avalanche energy : Eas = 61 mJ

6. Channel temperature : Tch = 175 °C

7. Storage temperature : Tstg = -55 to +175 °C

Applications

The IRLR3105 MOSFET is power switching applications, including DC-DC converters, motor control, load switching, and power management in automotive, industrial, and consumer electronics.

IRLR3105 Datasheet PDF

IRLR3105 pdf