K4212 Datasheet – 25V, 48A, N-Ch, Power MOSFET ( PDF )

Part Number: K4212

Function: 25V, 48A, MOS FIELD EFFECT TRANSISTOR

Package: TO-252 Type

Manufacturer: Renesas

Images:

1 page
K4212 datasheet pdf

Description

The K4212 is N-channel MOSFET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.

Features

1. Low on-state resistance

(1) RDS(on)1 = 7.8 mΩ MAX. (VGS = 10 V, ID = 30 A)

(2) RDS(on)2 = 14 mΩ MAX. (VGS = 4.5 V, ID = 20 A)

2. Low total gate charge

(1) QG = 27 nC TYP. (VDD = 15 V, VGS = 10 V, ID = 30 A)

3. 4.5 V drive available

4. Avalanche capability ratings

2 page
K4212 mosfet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 25 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 48 A

4. Total Power Dissipation: Pd = 1 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

K4212 Datasheet PDF

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C5411 PDF Transistor – NPN, Equivalent, 2SC5411 ( Datasheet )

Part Number: C5411, 2SC5411

Function: 600V, 14A, Silicon NPN Transistor

Package: TO-220 Type

Manufacturer: Toshiba Semiconductor

Images:

C5411 pdf pinout

 

Description

C5411 is 600V, 14A, NPN Transistor. 

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Features

1. High Voltage : VCBO = 1500 V

2. Low Saturation Voltage : VCE (sat) = 3 V (Max.)

3. High Speed : tf = 0.15 μs (Typ.)

4. Collector Metal (Fin) is Fully Covered with Mold Resin.

 

3 page
C5411 transistor datasheet

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 1500 V

2. Collector to Emitter Voltage: Vceo = 600 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 14 A

5. Collector Dissipation : Pc = 60 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

Applications:

1. HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION

2. HIGH SPEED SWITCHING

C5411 PDF Datasheet