Part Number: IRFP240
Function: 20A, 200V, 0.180 Ohm, N-Channel Power MOSFET
Package: TO-247 Type
Manufacturer: International Rectifier
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Description
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Pinout
Features
1. 20A, 200V
2. rDS(ON) = 0.180Ω
3. Single Pulse Avalanche Energy Rated
4. SOA is Power Dissipation Limited
5. Nanosecond Switching Speeds
6. Linear Transfer Characteristics
7. High Input Impedance
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