Part Number: B20N03V, EMB20N03V
Function: 30V, 12A, N-Channel MOSFET
Device Name: EMB20N03V for EDFN 3 x 3
Manufacturer: Excelliance MOS Corporation
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Description
This is 30V, 12A, N‐Channel Logic Level Enhancement Mode Field Effect Transistor.
Features
1. BVdss = 30V
2. Rdson (max) : 20 m Ohm
3. Id = 12A
4. UIS, Rg 100% Tested, Pb‐Free Lead Plating & Halogen Free
B20N03V Pinout
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 30 V
2. Gate to source voltage: VGSS = ± 20 V
3. Drain current: ID = 12 A (Tc = 25°C)
4. Power Dissipation: Pd = 21 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Marking Information
B20N03V Datasheet PDF
