This is one of the types of MOSFETs and is a kind of transistor.
Part Number: K10A600
Function: 600V, 10A, N-Ch, MOSFET
Package: TO-220 Type
Manufacturer: Toshiba
Image :
( Correct PartNumber : K10A600 -> K10A60D )
Description
This is 600V, 10A, Silicon N Channel MOSFET Type Transistor.
Features
1. Low drain-source ON-resistance: RDS (ON)= 0.58 Ω(typ.)
2. High forward transfer admittance: |Yfs| = 6.0 S (typ.)
3. Low leakage current: IDSS= 10 μA(max)(VDS= 600 V)
4. Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)
K10A600 Pinout
Absolute Maximum Ratings (Ta = 25°C)
1. Drain to source voltage: VDSS = 600 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 10 A
4. Drain Power Dissipation: Pd = 45 W
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
Applications:
1. Switching Regulator
Electrical Characteristics (Ta =25°C)
K10A600 Datasheet PDF
Other data sheets are available within the file: K10A60 , K10A60D, TK10A60D
