What is BSS123? Vertical D-MOS Transistor

What is BSS123?

An N-channel enhancement mode vertical D-MOS transistor is a type of field-effect transistor (FET) that is designed for high-power applications. It uses a vertical structure to improve its performance.

In a vertical D-MOS transistor, the source and drain regions are located on opposite sides of the silicon substrate, with the gate electrode running vertically between them. When a voltage is applied to the gate, an electric field is created that controls the flow of current through the channel.

The “D” in D-MOS stands for “double-diffused”, which refers to the way that the doping profiles are created during the manufacturing process. This allows for a more precise control of the channel and reduces the on-resistance of the device, making it more efficient.

The “MOS” in MOS transistor stands for “metal-oxide-semiconductor”, which refers to the way that the gate electrode is insulated from the channel by a thin oxide layer.

Part Number: BSS123

Function: 100V, 150mA, Vertical D-MOS transistor

Package: SOT23 Type

Manufacturer: Philips Semiconductor

Image and Pinouts:

BSS123 datasheet



The BSS123 is 100V, 150mA, N-channel TrenchMOS transistor Logic level FET.

N-channel enhancement mode vertical D-MOS transistor in a SOT23 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers.


1. ’Trench’technology

2. Extremely fast switching

3. Logic level compatible

4. Subminiature surface mounting package


Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 100 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 150 mA

4. Total Power Dissipation: Pd = 250 mW

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -65 to +150 °C

BSS123 Datasheet PDF Download

BSS123 pdf

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