C1213 Transistor – 35V, 500mA, NPN, Equivalent, 2SC1213 ( PDF )

Part Number: C1213, 2SC1213

Function: 35V, 500mA, NPN Transistor

Package: TO-92 type

Manufacturer: Renesas, Hitachi Semiconductor

Images:C1213 pdf pinout


C1213 is 5V, 500mA, Silicon NPN Epitaxial Transistor. A Silicon NPN Epitaxial Planar Transistor is a type of bipolar junction transistor (BJT) made from silicon, a semiconductor material. This transistor is designed for amplifying or switching electronic signals in various electronic circuits.

NPN Configuration:

1. Emitter (N): The heavily doped N-type layer, which is the source of charge carriers (electrons) in the transistor.

2. Base (P): The thin P-type layer, which controls the flow of charge carriers between the emitter and collector.

3. Collector (N): The N-type layer, which collects the charge carriers that pass through the base-emitter junction.

Silicon NPN Epitaxial Planar Transistors are fundamental components in electronic circuits, playing a crucial role in amplification, signal processing, and digital logic. They are widely used in a vast array of electronic devices, including radios, amplifiers, computer processors, and many other applications where signal control and amplification are essential.

C1213 datasheet transistor

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 35 V

2. Collector to Emitter Voltage: Vceo = 35 V

3. Emitter to Base Voltage: Vebo = 4 V

4. Collector Current: Ic = 500 mA

5. Collector Dissipation : Pc = 400 mW

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C


1. Low frequency amplifier

2. Complementary pair with 2SA673 and 2SA673A


C1213 PDF Datasheet

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