Part Number: C2229, 2SC2229
Function: 150V, 50mA, NPN Transistor.
Package: TO-92MOD Type
Manufacturer: Toshiba
Images:
Description
C2229 is 150V, 50mA, Silicon NPN Triple Diffused Type Transistor.
A Silicon NPN Epitaxial Planar Transistor is a type of bipolar junction transistor (BJT) made from silicon, a semiconductor material. This transistor is designed for amplifying or switching electronic signals in various electronic circuits.
NPN Configuration:
1. Emitter (N): The heavily doped N-type layer, which is the source of charge carriers (electrons) in the transistor.
2. Base (P): The thin P-type layer, which controls the flow of charge carriers between the emitter and collector.
3. Collector (N): The N-type layer, which collects the charge carriers that pass through the base-emitter junction.
Silicon NPN Epitaxial Planar Transistors are fundamental components in electronic circuits, playing a crucial role in amplification, signal processing, and digital logic. They are widely used in a vast array of electronic devices, including radios, amplifiers, computer processors, and many other applications where signal control and amplification are essential.
Features
• High breakdown voltage: VCEO = 150 V (min)
• Low output capacitance: Cob = 5.0 pF (max)
• High transition frequency: fT = 120 MHz (typ.)
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = 200 V
2. Collector to Emitter Voltage: Vceo = 150 V
3. Emitter to Base Voltage: Vebo = 5 V
4. Collector Current: Ic = 50 mA
5. Collector Dissipation : Pc = 800 mW
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C
Applications:
1. Black and White TV Video Output
2. High-Voltage Switching
3. Driver Stage Audio Amplifier