Part Number: D2580, 2SD2580
Function: 800V, 10A, NPN Transistor
Package: TO-3PML Type
Manufacturer: Sanyo Semicon Device
D2580 is 800V, 10A, NPN Triple Diffused Planar Silicon Transistor.
A Silicon NPN Epitaxial Planar Transistor is a type of bipolar junction transistor (BJT) made from silicon, a semiconductor material. This transistor is designed for amplifying or switching electronic signals in various electronic circuits.
1. Emitter (N): The heavily doped N-type layer, which is the source of charge carriers (electrons) in the transistor.
2. Base (P): The thin P-type layer, which controls the flow of charge carriers between the emitter and collector.
3. Collector (N): The N-type layer, which collects the charge carriers that pass through the base-emitter junction.
Silicon NPN Epitaxial Planar Transistors are fundamental components in electronic circuits, playing a crucial role in amplification, signal processing, and digital logic. They are widely used in a vast array of electronic devices, including radios, amplifiers, computer processors, and many other applications where signal control and amplification are essential.
1. High speed.
2. High breakdown voltage (VCBO=1500V).
3. High reliability (Adoption of HVP process).
4. Adoption of MBIT process.
5. On-chip damper diode.
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = 1500 V
2. Collector to Emitter Voltage: Vceo = 800 V
3. Emitter to Base Voltage: Vebo = 6 V
4. Collector Current: Ic = 10 A
5. Collector Dissipation : Pc = 3 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C