This post explains for the transistor.
Part Number: C2655, 2SC2655
Function: 50V, 2A, Silicon NPN Transistor
Package: TO-92MOD Type
Manufacturer: Toshiba
See the preview image and the PDF file for more information.
C2655 transistor Image
Description
The C2655 is a medium-power NPN silicon transistor designed for both linear amplification and switching applications. It offers low saturation voltage, relatively fast switching characteristics, and moderate current capability, making it suitable for audio stages and general-purpose power control circuits.
Features
1. Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A)
2. High collector power dissipation: PC = 900 mW
3. High-speed switching: tstg = 1.0 μs (typ.)
4. Complementary to 2SA1020.
C2655 Pinout
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = 50 V
2. Collector to Emitter Voltage: Vceo = 50 V
3. Emitter to Base Voltage: Vebo = 5 V
4. Collector Current: Ic = 2A
5. Total Dissipation : Pc = 900 mW
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C
Design Notes (Critical Points)
- Ensure adequate base drive for full saturation
- Thermal dissipation is a major limitation (900mW max)
- Use heat sinking or PCB copper area if operating near limits
- Include flyback diode when driving inductive loads
- Avoid operation near maximum ratings for reliability
Advantages vs MOSFET
- Simpler drive requirements (no gate charge considerations)
- Better linear behavior for analog amplification
Typical Applications
- Audio power amplifier stages (driver/output stage)
- Push-pull amplifier circuits
- Relay drivers and inductive load switching
- General-purpose power switching
- Motor control (low power)
Alternative / Equivalent Products
- 2SC2655 (standard naming variant)
- BD139 (higher power capability)
- 2N2222 (lower current applications)
- 2SC1815 (signal-level use)
Other data sheets are available within the file: 2SC2655
C2655 Datasheet PDF Download
