What is C828?
This is a widely used NPN bipolar junction transistor (BJT) that is commonly used in electronic circuits for amplification and switching applications. Its low cost, high current gain, and wide operating temperature range make it particularly suitable for use in low-power and low-cost applications. However, its limited voltage and current handling capabilities and low frequency response may limit its use in more demanding applications.
Part Number: C828, 2SC828
Function: 25V, 50mA, NPN Transistor
Package: TO-92 Type
Manufacturer: Toshiba
Pinouts :
Description
This is NPN Silicon Epitaxial Planar Transistor. The C828 is a versatile transistor that can be used in a wide range of electronic circuits for amplification and switching purposes. Its low cost, high current gain, and wide operating temperature range make it particularly suitable for use in low-power and low-cost applications.
Advantages Vs Disadvantages
Advantages:
1. Low cost: Low-cost transistor that is widely available and affordable.
2. High current gain: High current gain, which makes it suitable for use in low-power amplifier circuits.
3. Wide operating temperature range: It can operate within a temperature range of -55°C to +150°C, making it suitable for use in a wide range of environments.
4. Easy to use: The transistor is housed in a small TO-92 package, which makes it easy to incorporate into electronic circuits.
Disadvantages:
1. Low voltage and current handling capabilities: The C828 has a maximum collector-base voltage of 25V and a maximum collector current of 50mA, which limits its use in circuits that require higher voltage and current handling capabilities.
2. Limited frequency response: The transistor has a low cutoff frequency, which limits its use in high-frequency applications.
3. Temperature sensitivity: The transistor’s performance can be affected by changes in temperature, which can impact circuit performance.
C828 Electronics Charateristics
Absolute maximum ratings ( Ta=25°C )
1. Collector to Base Voltage: Vcbo = 30 V
2. Collector to Emitter Voltage: Vceo = 25 V
3. Emitter to Base Voltage: Vebo = 7 V
4. Collector Current: Ic = 50 mA
5. Collector Dissipation : Pc = 400 mW
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C
C828 Datasheet PDF Download
Other data sheets are available within the file: 2SC828, 2SC828A, C828A
