Datasheet

2SK2662 Datasheet PDF – 500V, 5A, MOSFET, Transistor

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Part Number: 2SK2662

Function: 500V, 5A, Silicon N Channel MOSFET

Package: TO-220 Type

Manufacturer: Toshiba

Image and Pinouts:

2SK2662 datasheet

Description

The 2SK2662 is a 500V N-channel enhancement-mode MOSFET designed for high-voltage switching applications, typically housed in a TO-220 package. It features low on-resistance, high forward transfer admittance, and low leakage current, enabling efficient power handling and fast switching performance. This device is widely used in DC-DC converters, motor drives, and relay control circuits.

Features

  • Low drain-source on-resistance with RDS(on)=1.35Ω (typ.)
  • High forward transfer admittance |Yfs|=4.0S (typ.)
  • Low leakage current with IDSS=100µA (max)
  • High voltage capability up to 500V
  • Enhancement mode operation with Vth=2.0–4.0V
  • Suitable for high-efficiency switching applications

Absolute Maximum Ratings (Tc = 25 °C)

Parameter Symbol Value Unit
Drain-Source Voltage VDSS 500 V
Gate-Source Voltage VGSS ±30 V
Drain Current ID 5 A
Power Dissipation Pd 35 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg -55 to 150 °C

Design Notes

  • Ensure gate drive voltage exceeds threshold sufficiently for full enhancement
  • Use proper gate resistor to control switching speed and reduce ringing
  • Heat sinking is necessary for high power dissipation conditions
  • Consider snubber or clamp circuits for inductive load switching
  • Pay attention to SOA limits during switching transitions

Typical Circuit Usage

  • Primary switching element in DC-DC converters
  • Motor drive switching circuits
  • Relay and solenoid drivers
  • High-voltage switching regulators
  • Power control stages in industrial electronics

How to Choose This Part

  • Select for high-voltage applications up to 500V
  • Suitable when moderate current (≤5A) is required
  • Ensure RDS(on) meets efficiency requirements
  • Verify gate drive compatibility with control circuitry
  • Consider thermal design for continuous operation

Applications

  • DC-DC converters
  • Relay drive circuits
  • Motor drive systems
  • Switch-mode power supplies
  • Industrial power control

Alternative / Equivalent Products

  • 2SK2545 (similar high-voltage MOSFET)
  • IRF840 (widely used 500V MOSFET)
  • STP5NK50Z (STMicroelectronics equivalent)
  • FQP5N50 (ON Semiconductor alternative)
  • 2SK1118 (comparable N-channel MOSFET)

2SK2662 Datasheet PDF Download


2SK2662 pdf

Other data sheets are available within the file: K2662

KDV147 Datasheet PDF – 15V, Variable Capacitance Diode

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Part Number: KDV147

Function: Variable Capacitance Diode, Silicon Epitaxial Planar Diode

Package: TO-92M Type

Manufacturer: KEC

Image and Pinouts:

KDV147 datasheet

Description

The KDV147 is a 15V silicon epitaxial planar variable capacitance diode (varactor) designed for voltage-controlled tuning applications in RF circuits, typically supplied in a compact small-signal package. It provides low series resistance and stable capacitance variation characteristics, making it suitable for frequency tuning and modulation. This device is primarily used in FM radio band tuning, VCO circuits, and RF filtering applications.

Features

  • Low series resistance with rs=0.3Ω (typ.)
  • Optimized for voltage-controlled capacitance tuning
  • Compact small-signal package
  • Silicon epitaxial planar construction for stability
  • Suitable for RF and high-frequency applications

Pinout

Absolute Maximum Ratings (Tc = 25 °C)

Parameter Symbol Value Unit
Reverse Voltage VR 15 V
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55 to 150 °C

Design Notes

  • Operate strictly under reverse bias to utilize capacitance variation
  • Capacitance decreases as reverse voltage increases (nonlinear characteristic)
  • Minimize series resistance effects for high-Q tuning circuits
  • Use stable bias voltage for predictable frequency control
  • Temperature variation can affect capacitance, consider compensation if required

Typical Circuit Usage

  • Voltage-controlled oscillators (VCO)
  • RF tuning circuits in FM receivers
  • Frequency modulation circuits
  • Band-pass and notch filters with tunable response
  • PLL frequency control systems

How to Choose This Part

  • Select when low-voltage (≤15V) tuning range is sufficient
  • Ideal for FM band and low-power RF applications
  • Ensure required capacitance range matches tuning needs
  • Prefer when low series resistance is critical for Q factor
  • Consider alternative varactors for wider tuning ratios or higher voltage operation

Applications

  • FM radio band tuning
  • Wireless communication circuits
  • Signal generators and RF modulators
  • Frequency synthesizers
  • Consumer RF electronics

Alternative / Equivalent Products

  • BB109 (common varactor diode)
  • MV2109 (tuning diode alternative)
  • 1SV149 (low-voltage varactor diode)
  • BBY51 (SMD varactor option)
  • KV1235 (similar tuning diode)

Other data sheets are available within the file:

KDV147A, KDV147B, KDV147C, KDV147D

KDV147 Datasheet PDF Download


KDV147 pdf