Datasheet

1R5GU41 Datasheet PDF – 400V, 1.5A, Diode, Rectifier

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Part Number: 1R5GU41

Function: 1.5A, 400V, Fast Recovery Rectifier, Diode

Package: 3-4B1A, DO-31 Type

Manufacturer: Toshiba

Image and Pinouts:

1R5GU41 datasheet

Description

1R5GU41 diode is Silicon Diffused Type Duper Fast Recovery Rectifier. Ultra-Fast Recovery: With a 100 ns reverse-recovery time, it’s well-suited for high-frequency applications where efficiency and low switching losses are critical.

 

Features

1. Repetitive Peak Reverse Voltage  : VRRM = 400V

2. Average Forward Current  : IF (AV) = 1.5A (Ta = 25°C)

3. Very Fast Reverse−Recovery Time  : trr = 100ns

 

Absolute maximum ratings

1. Repetitive Peak Reverse Voltage : VRRM = 400 V

2. Average Forward Current : IF (AV) = 1.5 A

3. Peak One Cycle Surge Forward Current  (Non−Repetitive) : IFSM = 60 (50Hz), 66 (60Hz) A

4. Junction Temperature : Tj = – 40 ~ 150 °C

5. Storage Temperature Range : Tstg = – 40 ~ 150 °C

 

Applications

1. SMPS / DC–DC Converters: Fast recovery ensures reduced switching losses and minimal EMI.

2. Flyback / Boost Converters: Acts as a fast freewheeling or output rectifier.

3. Snubber and Hard-Switching Circuits: Where brief reverse currents and quick transitions demand sharp recovery.

 

Other data sheets are available within the file: 1R5GU

1R5GU41 Datasheet PDF Download


1R5GU41 pdf

4407A Datasheet – 30V, P-Ch, MOSFET, Transistor, AO4407A

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This is a kind of MOSFET.

Part Number: 4407A, AO4407A

Function: 30V, 12A, P-Channel MOSFET

Package: SOIC-8 Type

Manufacturer: Alpha and Omega Semiconductor

Image :
4407A datasheet

Description

The 4407A uses advanced trench technology to provide excellent R DS(ON) , and ultra-low low gate charge with a 25V gate rating. This device is suitable foruse as a load switch or in PWM applications.

The AO4407A is a P-channel power MOSFET in an 8-pin SOIC package, optimized for high-efficiency load switching and DC-DC conversion. It uses advanced trench MOSFET technology to achieve very low RDS(ON) and low gate charge, making it highly suitable for battery-powered and power management applications.

Pinout

4407A pinout

Product Summary (Ta = 25°C)

1. Drain-Source Voltage : VDS = -30V

2. Continuous Drain Current : ID = -12A (VGS = -20V)

3. RDS(ON) < 11mΩ (VGS = -20V)

4. RDS(ON) < 13mΩ (VGS = -10V)

5. RDS(ON) < 17mΩ (VGS = -6V)

6. Power Dissipation: Pd = 3.1 W

7. Junction Temperature: Tj = 150°C

8. Storage Temperature: Tsg = -55 ~ +150°C

Design Notes (Critical Points)

  • Ensure sufficient negative VGS for full enhancement
  • Use gate resistor to control switching speed and ringing
  • Provide adequate PCB copper for thermal dissipation
  • Check SOA (Safe Operating Area) for high current pulses
  • Consider paralleling devices for higher current applications

Typical Applications

  • High-side load switch
  • Battery protection circuits
  • DC-DC buck/boost converters (as high-side switch)
  • Power path control (adapter ↔ battery selection)
  • Hot-swap and power OR-ing circuits

Alternative / Equivalent Products

  • IRF7416 (P-channel MOSFET)
  • Si4435DY
  • FDN306P (lower current applications)
  • AO4409 (higher performance variant)

Other data sheets are available within the file: AO4407A

4407A Datasheet PDF Download

4407A pdf